Narrow-gap II-VI Compounds for Optoelectronic and Electromagnetic Applications 53 seine Lebensphase

seine Lebensphase

The papers which follow are the proceedings of that Workshop and represent the combined works of 36 scientists from across the United States and Canada

humour and pragmatism was evident in early meetings of the Group and in the first issues of the Bulletin

Air pollution in cities

Narrow-gap II-VI Compounds for Optoelectronic and Electromagnetic Applications 53 seine LebensphaseThe field of narrow gap II VI materials is dominated by lhe compound mercury cadmium telluride, MCT or Hg1_ .. Cd .. Te. By varying the x value, material can be made to cover all the important infrared (lR) ranges of interest. It is probably true to say that MCT is the third most studied semiconductor after silicon and gallium arsenide. As current epitaxial layers of MCT are mainly grown on bulk CdTe family substrates these materials are included in